Hostname: page-component-6bf8c574d5-mggfc Total loading time: 0 Render date: 2025-02-15T09:54:27.609Z Has data issue: false hasContentIssue false
  • English
  • Français

Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers.

Published online by Cambridge University Press:  21 March 2011

Z. Liliental-Weber ,
J. Jasinski ,
D. Cherns ,
M. Baines  and
R. Davis
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720 m/s 62/203
J. Jasinski
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720 m/s 62/203
D. Cherns
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol, UNITED KINGDOM
M. Baines
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol, UNITED KINGDOM
R. Davis
Affiliation:
Department of Materials Science and Engineering, University of North Carolina, Raleigh, NC.
Get access

Abstract

Transmission electron microscopy of plan-view and cross-section samples of pendeo-epitaxial layers is described. Samples grown with and without silicon nitride masks are compared. A large misorientation of the GaN grown above the mask was observed, with 2-3° tilt between wing and seed areas, caused by additional nucleation on the mask layer. Some misorientation was also observed between wing/wing areas of the sample. Samples grown without silicon nitride masks show much smaller misorientations and contain different types of defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I5.7.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Marchand, H., Ibbetson, J.P., Fini, P.T., Kosodoy, P., Keller, S., DenBaars, S., Speck, J.S., Mishra, U.K., MRS Internet J. Nitride Semicond. Res. 3, 3 (1998).10.1557/S1092578300000752Google Scholar
2. Sakai, A., Sunakawa, H., Usui, A., Appl. Phys. Lett. 71, 2259(1997).Google Scholar
3. Liliental-Weber, Z., Benamara, M., Swider, W., Washburn, J., Park, J., Grudowski, P. A., Eiting, C. J., and Dupuis, R. D., MRS Internet J. Nitride Semicond. Res. Res. 4S1, G4.6, (1998).Google Scholar
4. Liliental-Weber, Z. and Cherns, D., J. Appl. Phys. 89, 7833(2001).10.1063/1.1370366Google Scholar
5. Zheleva, T., Smith, S., Thomson, D., Linthicum, K., Rajagopal, P., Davis, R.F., J. Electr. Mat. 28 (4), L5 (1999).10.1007/s11664-999-0239-zGoogle Scholar
6. Zheleva, T., Smith, S., Thomson, D., Linthicum, K., Rajagopal, P., Carlson, E., Ashmawi, W., and Davis, R.F., MRS Internet J. Nitride Semicond. Res. 4S1, G49 (1999).Google Scholar
7. Fini, P., Marchand, H., Ibbetson, J.P., Moran, B., Zhao, L., DenBaars, S.P., Speck, J.S., Mishra, U. Mater. Res. Soc. Symp. Proc. 572, 315(1999).10.1557/PROC-572-315Google Scholar
8. Davis, R.F., Gehrke, T., Linthicum, K.J., Zhelewa, T.S.. Preble, E.A., Rajagopal, P., Zorman, C.A., and Mehregany, M., J. Crystal Growth 225, 134(2001).10.1016/S0022-0248(01)00836-3Google Scholar