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Stress Effects in the Oxidation of Planar SiO2 Thin Films

Published online by Cambridge University Press:  10 February 2011

T. J. Delph  and
R. J. Jaccodine
T. J. Delph
Affiliation:
Dept. of Mech. Eng. & Mechanics, Lehigh University, Bethlehem, PA 18015, tjdl @lehigh.edu
R. J. Jaccodine
Affiliation:
Dept. of Materials Sci. & Eng., Lehigh University, Bethlehem, PA 18015
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Abstract

We summarize here the results of recent experimental and analytical investigations into stress effects in planar SiO2 thin films. Experimentally, we examine the effects of a constant superposed in-plane stress upon the growth of thin oxide films in the 100 Å range. In contradiction to a widely accepted model of stress effects upon SiO2 film growth, we find that both compressive and tensile in-plane stresses tend to retard oxide growth by a roughly equal amount. Analytically, we investigate the effects of the small component of strain induced parallel to the oxidation interface by the large volume expansion inherent in the oxidation of silicon. Depending upon the circumstances, this strain component, dubbed the “intrinsic strain”, can have a non-negligible effect upon the growth of planar oxide layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 175
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Marcus, R.B. and Sheng, T.T., J. Electrochem. Soc. 129, 1278 (1982).Google Scholar
2. Mizuno, T., Sawada, S., Maeda, S., and Shinozake, S., IEEE Trans. Elect. Devices ED–34, 2255 (1987).Google Scholar
3. Lutze, W., Perera, A.H., and Krusius, J.P., J. Electrochem. Soc. 137, 1867 (1990).Google Scholar
4. Sutardja, P. and Oldham, W.G., IEEE Trans. Elect. Devices ED–36, 2415 (1989).Google Scholar
5. Peng, J.P.. Chidambarrao, D., and Srinivasan, G.R., Int. J. Comp. Math. Elec. Eng. 10, 341, (1991).Google Scholar
6. Rafferty, C.S., Ph. D. thesis, Stanford University (1991).Google Scholar
7. Senez, V., Collard, D., Baccus, B., Brault, M., and Lebailly, J.J., J. Appl. Phys. 76, 3285 (1994).Google Scholar
8. Mihalyi, , Jaccodine, R.J., and Delph, T.J., Appl. Phys. Lett. 74 (1999).Google Scholar
9. Arnett, D., Jaccodine, R.J., and Delph, T.J., unpublished data.Google Scholar
10. Deal, B.E. and Grove, A.S., J. Appl. Phys. 36, 3770 (1965).Google Scholar
11. EerNisse, E.P., Appl. Phys. Lett. 35, 8 (1979).Google Scholar
12. Delph, T.J., J. Appl. Phys. 83, 786 (1998).Google Scholar
13. Kobeda, E. and Irene, E.A., J. Vac. Sci. Technol. B 6, 574 (1988).Google Scholar
14. Delph, T.J. and Lin, M.-T., J. Mat. Research, to appear.Google Scholar
15. Thomas, J.P. and Chopin, C.E., Int. J. Eng. Sci. 37, 1 (1999).Google Scholar