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Semi-Insulating InP Grown by MOCVD

Published online by Cambridge University Press:  26 February 2011

M. S. Feng ,
C. C. Wu ,
K. C. Lin ,
S. H. Chan  and
C. Y. Chen
M. S. Feng
Affiliation:
National Nano Devices Laboratory, National Chiao-Tung University.
C. C. Wu
Affiliation:
National Nano Devices Laboratory, National Chiao-Tung University.
K. C. Lin
Affiliation:
National Nano Devices Laboratory, National Chiao-Tung University.
S. H. Chan
Affiliation:
National Nano Devices Laboratory, National Chiao-Tung University.
C. Y. Chen
Affiliation:
Material Research Laboratory/ITRI, Hsinchu, Taiwan, R. O. C.
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Abstract

Fe (C5H5)2 and Fe (CO)5 were used as the 3d transition metal dopants in semi-insulating InP epitaxial layer grown by MOCVD. From the bright and dark field images of the TEM analysis, many precipitates were observed. Three extra peaks of the X-ray diffraction were found. The peaks of free-exciton recombination, donor-acceptor transition and the recombination of bound exciton with phonon emission were observed in the short wavelength range. Two Fe related peaks was observed at 0.7079 eV and 0.6897 eV. For a wide range (10–600) of In/Fe mole fraction, the resistivity keeps at high values (about 108 Ω -cm) and appears the highest resistivity of 5 × 108 Ω -cm for 1 μ m layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 183
Copyright
Copyright © Materials Research Society 1992

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References

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