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Regrowth of Amorphized Compound Semiconductors

Published online by Cambridge University Press:  25 February 2011

W.G. Opyd  and
J.F. Gibbons
W.G. Opyd
Affiliation:
Also Lockheed Research and Development Division, Palo Alto, CA 94304
J.F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
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Abstract

Epitaxial regrowth is investigated for layers of InSb and GaAs amorphized by liquid nitrogen temperature ion implants. Experimental criterion for amorphization and limitation of regrowth are correlated with damage calculated by a Boltzmann transport equation approach to ion implant modeling. Conditions for complete epitaxial regrowth as determined by channeled Rutherford backscattering spectrometry are presented with evaluation of residual defects by transmission electron microscopy. Electrical activation following regrowth of GaAs is reported and correlated with calculated damage profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 273
Copyright
Copyright © Materials Research Society 1985

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References

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