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Reaction And Interdiffusion at III-V Compound Semiconductor-Metal Interfaces

Published online by Cambridge University Press:  26 February 2011

L. J. Brillson
L. J. Brillson*
Affiliation:
Xerox Webster Research Center, 800 Phillips Road 114–41D, Webster, N.Y. 14580.
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Abstract

The characterization of III-V compound semiconductor-metal interfaces by surface science techniques has led to new relationships between interfacial chemistry and Schottky barrier formation. These and recent results on ternary alloy III-V compounds suggest a greater control of Schottky barrier heights by atomic scale techniques and advanced III-V materials than previously believed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 327
Copyright
Copyright © Materials Research Society 1986

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References

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