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Rare-Earth Doped In1−xGaxP Prepared by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  26 February 2011

A. J. Neuhalfen  and
B. W. Wessels
A. J. Neuhalfen
Affiliation:
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
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Abstract

The dependence of the luminescent properties of rare-earth impurities on the band structure of the host compound semiconductor has been investigated. Photoluminescence spectroscopy was used to characterize the optical properties of rare-earth doped Ini1−xGaxP layers prepared by metalorganic vapor phase epitaxy as a function of alloy composition. Thermal quenching of the Er3+, Yb3+, and Tm3+ related emission was observed over the temperature range of 15K to 360K with activation energies that depended on the alloy composition. From measurements of the thermally activated luminescence quenching, the energy levels of the isovalent erbium, ytterbium, and thulium in the alloys were determined. The variation of the position of the rare-earth related energy levels in the host semiconductor is explained in terms of a vacuum referred binding energy model that should have general applicability to other rare-earth doped semiconductor systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 195
Copyright
Copyright © Materials Research Society 1992

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References

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