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Raman and FTIR Study of Neutron Irradiated CVD Diamond

Published online by Cambridge University Press:  10 February 2011

S. Khasawinah ,
G. Popovici ,
M. A. Prelas ,
M. Mccormick ,
S. K. Loyalka ,
G. Manning ,
J. Farmer ,
H. W. White  and
F. Shahedi Pour
S. Khasawinah
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211 USA
G. Popovici
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211 USA
M. A. Prelas
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211 USA
M. Mccormick
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211 USA
S. K. Loyalka
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211 USA
G. Manning
Affiliation:
Nuclear Engineering Department, University of Missouri, Columbia, MO 65211 USA
J. Farmer
Affiliation:
Research Reactor, University of Missouri, Columbia, MO 65211, USA
H. W. White
Affiliation:
Department of Physics, University of Missouri, Columbia, MO 65211, USA
F. Shahedi Pour
Affiliation:
Department of Physics, University of Missouri, Columbia, MO 65211, USA
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Abstract

Undoped and 10B doped diamond films were neutron irradiated at a moderately high fluence level (thermal neutron fluence of 1.3 × 1020 n/cm2 and a fast neutron (E> 0.1 MeV) fluence of 1.6 × 1020 n/cm2). The unirradiated, irradiated, irradiated and annealed samples were studied using Fourier Transform Infrared (FTIR) and Raman spectroscopies. A dependence of radiation induced stress on the initial boron concentration was observed. The radiation induced stress was lower for the undoped samples. Correlations between FTIR and Raman data were found. The radiation damage was removed after annealing, as measured by Raman and FTIR spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 223
Copyright
Copyright © Materials Research Society 1996

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References

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