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Pulsed Laser-Induced Crystallization and Amorphization of SiGe Films.

Published online by Cambridge University Press:  21 February 2011

T. Sameshima  and
S. Usui
T. Sameshima
Affiliation:
Sony Research Center, Yokohama 240 Japan.
S. Usui
Affiliation:
Sony Research Center, Yokohama 240 Japan.
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Abstract

Pulsed laser-induced melting followed by crystallization and amorphization were studied on silicon-germanium alloy (SiGe) films. Although amorphization was achieved on SiGe films, it was not observed in pure Ge films. Crystalline nucleation density in homogeneous solidification increased as Ge concentration increased. It was 1×1024m-3for Si0.22Ge0.78 films, while it was 4×1022m-3 for pUre si films. Electrical conductivity of laser polycrystallized films increased as Ge concentration increased. It had a maximum of 1 S/cm when Ge concentration was 0.78. This high electrical conductivity would be brought about by the increase of carrier mobility as well as the reduction of the band gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 117
Copyright
Copyright © Materials Research Society 1992

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References

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