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Photoluminescence between 3.36 eV and 3.41 eV from GaN Epitaxial Layers

Published online by Cambridge University Press:  10 February 2011

R. Seitz ,
C. Gaspar ,
T. Monteiro ,
E. Pereira ,
M. A. Poisson  and
B. Beaumont
R. Seitz
Affiliation:
Universidade de Aveiro, Departamento de Física, Aveiro, Portugal
C. Gaspar
Affiliation:
Universidade de Aveiro, Departamento de Física, Aveiro, Portugal
T. Monteiro
Affiliation:
Universidade de Aveiro, Departamento de Física, Aveiro, Portugal
E. Pereira
Affiliation:
Universidade de Aveiro, Departamento de Física, Aveiro, Portugal
M. A. Poisson
Affiliation:
Thomson-CSF, Orsay, France
B. Beaumont
Affiliation:
CHREA-CNRS, Valbonne, France
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Extract

GaN, its alloys, QWs and MQWs have gained an important place among shortwavelength optical emitters and high temperature electronic devices [1,2]. The performance of such devices is limited by the presence of native and impurity defects. The understanding of the optical properties of the basic material allows us to improve its quality and thus increase the performance of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 419
Copyright
Copyright © Materials Research Society 1999

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References

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