Hostname: page-component-6bf8c574d5-9nwgx Total loading time: 0 Render date: 2025-02-15T09:27:11.813Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Anisotropy in a GaAs/AlAs Quantum Wire Array Grown on Vicinal Substrate

Published online by Cambridge University Press:  26 February 2011

H. Kanbe ,
A. Chavez-Pirson ,
M. Kumagai ,
H. Saito  and
T. Fukui
H. Kanbe
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
A. Chavez-Pirson
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
M. Kumagai
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
H. Saito
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
T. Fukui
Affiliation:
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan
Get access

Abstract

The optical properties of a quantum wire array which was successfully realized in a 4-nm-thick (GaAs)1/2 (AlAs)1/2 fractional-layer superlattice (FLS) are described. The FLS sample was grown by metalorganic chemical vapor deposition on a (001) vicinal GaAs substrate tilted 2 ° towards [110]. The nominal cross sectional size of the GaAs wires is 4×4 nm. Optical anisotropy in absorption, refractive index and photoluminescence was clearly observed by polarization spectroscopy at room temperature as well as lower temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 213
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Sakaki, H., IEEE J. Quantum Electron. QE- 22, 1845 (1986).CrossRefGoogle Scholar
[2] Arakawa, Y. and Yariv, A., IEEE J. Quantum Electron. QE- 22, 1887 (1986).Google Scholar
[3] Asada, M., Miyamoto, Y., and Suematsu, Y., IEEE J. Quantum Electron. QE- 22, 1915 (1986).CrossRefGoogle Scholar
[4] Takagahara, T., Solid State Commun. 78, 279 (1991).CrossRefGoogle Scholar
[5] Sakaki, H., Kato, K., and Yoshimura, H., Appl. Phys. Lett. 57, 2800 (1990).CrossRefGoogle Scholar
[6] Ando, H., Oohashi, H., and Kanbe, H., J. Appl. Phys. to be published in Dec. 1991 issue.Google Scholar
[7] Petroff, P. M., Gossard, A. C., and Wiezmann, W., Appl. Phys. Lett. 45, 620 (1984).Google Scholar
[8] Fukui, T. and Saito, H., Appl. Phys. Lett. 50, 824 (1987); J. Vac. Sci. Technol. B6, 1373 (1988).CrossRefGoogle Scholar
[9] Tsuchiya, M., Gaines, J. M., Yan, R. H., Simes, R. J., Holtz, P. O., Coldren, L. A., and Petroff, P. M., Phys. Rev. Lett. 62, 466 (1989).CrossRefGoogle Scholar
[10] Tanaka, M. and Sakaki, H., Appl. Phys. Lett. 54, 1326 (1989).Google Scholar
[11] Gorshoni, D., Weiner, J. S., Chu, S. N. G., Baraff, G. A., Vandenberg, J. M., Pfeiffer, L. N., West, K., Logan, R. A., and Tanbiin-Ek, T., Phys. Rev. Lett. 65, 1631 (1990).Google Scholar
[12] Kanbe, H., Chavez-Pirson, A., Ando, H., Saito, H., and Fukui, T., Appl. Phys. Lett. 58, 2969 (1991).Google Scholar
[13] Aspnes, D. E., Harbison, J. P., Studna, A. A., and Florez, L. T., Mater. Res. Soc. Proc. 91, 57 (1987); Phys. Rev. Lett. 59, 1687 (1987); Appl. Phys. Lett. 52, 957 (1988).CrossRefGoogle Scholar
[14] Ando, H., Fukui, T., and Saito, H., in Extended Abstracts of the 22nd Conf. on Solid State Devices and Materials, B–4–7, pp.123–126.Google Scholar
[15] Petroff, P. M., Internat'l Inst. for Advanced Studies Symp. on Science and Tech nolgy of Mesoscopic Structures, ThA-4, Nara, Japan, Nov. 6–8, 1991.Google Scholar
[16] Kasu, M., Ando, H., Saito, H., and Fukui, T., Appl. Phys. Lett. 59, 301 (1991).CrossRefGoogle Scholar
[17] Yamanishi, M. and Suemune, K., Japan. J. Appl. Phys. 23, L35 (1984).CrossRefGoogle Scholar
[18] Asada, M., Kameyama, A., and Suematsu, Y., IEEE J. Quantum Electron. QE- 20, 745 (1984).Google Scholar
[19] Sercel, P. C. and Vahala, K. J., Phys. Rev. B 42, 3690 (1990).CrossRefGoogle Scholar
[20] Citrin, D. S. and Chang, Y.-C., J. Appl. Phys. 70, 867 (1991).Google Scholar
[21] Fukui, T., Saito, H., and Tokura, Y., Appl. Phys. Lett. 55, 1958 (1989).CrossRefGoogle Scholar
[22] Chavez-Pirson, A., Yumoto, J., Ando, II., Fukui, T., and Kanbe, II., Appl. Phys. Lett. to be published in Nov. 18, 1991 issue.Google Scholar