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Non-Destructive Measurements of III-V Semiconductor Device Structure by a Hard X-ray Microprobe

Published online by Cambridge University Press:  26 February 2011

F. Uchida ,
J. Shigeta  and
Y. SUZUKI
F. Uchida
Affiliation:
Hitachi Central Research Laboratory, Kokubunji, Tokyo, 185
J. Shigeta
Affiliation:
Hitachi Central Research Laboratory, Kokubunji, Tokyo, 185
Y. SUZUKI
Affiliation:
Hitachi Advanced Research Laboratory, Hatoyama, Saitama, 350–03, Japan
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Abstract

A non-destructive characterization technique featuring a hard X-ray Microprobe is demonstrated for lll-V semiconductor device structures. A GaAs FET with a 2 μm gate length is measured as a model sample of a thin film structure. X-ray scanning microscopic images of the FET are obtained by diffracted X-ray and fluorescence X-ray detection. Diffracted X-ray detection measures the difference in gate material and source or drain material as a gray level difference on the image due to the X-ray absorption ratio. Ni Ka fluorescence detection, on the other hand, provides imaging of 500 Å thick Ni layers, which are contained only in the source and drain metals, through non-destructive observation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 147
Copyright
Copyright © Materials Research Society 1992

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References

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