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NEW SUPERLATTICE ARCHITECTURE IN III-V COMPOUND SEMICONDUCTORS VIA CONTROL OF EPITAXY ON AN ATOMIC SCALE

Published online by Cambridge University Press:  28 February 2011

P. M. PETROFF
P. M. PETROFF*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

The perfection and compositional stability of alternate monolayer compounds (AMC) structures deposited by molecular beam epitaxy as a function of several crystal growth parameters are reviewed. By using the (GaAs)1 - (AlAs)1 AMC structure as a prototype system, the effects of substrate temperature, and orientation on the AMC ordering are presented. Conditions for producing new superlattice architectures are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 19
Copyright
Copyright © Materials Research Society 1986

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References

1. Gossard, A. C., Petroff, P. M., Wiegmann, W., Dingle, R., and Savage, A., Appl. Phys. Lett., 29, 323 (1976).Google Scholar
2. Petroff, P. M., Gossard, A. C., Wiegmann, W., and Savage, A., J. Cryst. Growth, 44, 5 (1978).Google Scholar
3. Petroff, P. M., Gossard, A. C., Wiegmann, W., Appl. Phys. Lett., 45, 6, 620 (1984).Google Scholar
4. Hirayama, Y., Ohmori, Y. and Okamoto, H., Jap. Journ. of Appl. Phys., 23, 3, 488 (1984).CrossRefGoogle Scholar
5. Fukui, T. and Saito, H., Jap. Journ. of Appl. Phys., 23, 8, 521 (1984).Google Scholar
6. Kuan, T. S., Kuech, T. F., Wang, W. I. and Wilki, E. I., Phys. Rev. Lett., 54, 3, 201 (1985).Google Scholar
7. Petroff, P. M., Gossard, A. C., Savage, A. and Wiegmann, W., J. Cryst. Growth, 46, 172 (1979).Google Scholar
8. Petroff, P. M., J. Vac. Sci. Technol., 14, 973 (1977).Google Scholar
9. Petroff, P. M., Chen, C. H., and Werder, D., Ultramicroscopy (to be published).Google Scholar
10. Petroff, P. M., Joy, D. C., (to be published).Google Scholar
11. Neave, J. H., Dobson, P. J., Joyce, B. A. and Zhang, J., Appl. Phys. Lett., 47, 2, 100 (1985).CrossRefGoogle Scholar
12. Voillot, F., Maddukar, A., Kim, G. Y., Chen, T., Cho, N. M., Tang, W. and Newman, P., (to be published Appl. Phys. Lett.) (See these proceedings).Google Scholar
13. Fleming, R. M., McWhan, D. B., Gossard, A. C., Wiegmann, W. and Logan, R. A., J. Appl. Phys., 51, 357 (1980).Google Scholar
14. Petroff, P. M., Cho, A. Y., Reinhart, F. K., Gossard, A. C. and Wiegmann, W., Phys. Rev. Lett., 48, 170 (1982).Google Scholar