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Nanometer Resolution XANES Imaging of in situ switched individual PC-RAM devices

Published online by Cambridge University Press:  28 May 2013

Jan H. Richter ,
Alexander V. Kolobov ,
Paul Fons ,
Xiaomin Wang ,
Kirill V. Mitrofanov ,
Junji Tominaga ,
Hitoshi Osawa  and
Motohiro Suzuki
Jan H. Richter
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan
Alexander V. Kolobov
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
Paul Fons
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
Xiaomin Wang
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan
Kirill V. Mitrofanov
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan
Junji Tominaga
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan
Hitoshi Osawa
Affiliation:
SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
Motohiro Suzuki
Affiliation:
SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
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Abstract

We report on the study of single devices of phase-change (Ge2Sb2Te5) memory cells in line cell type devices. Devices were investigated employing an x-ray nanobeam of only about 150 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell. XANES spectra showing the device in the amorphous and crystalline state have been successfully collected after switching the device in situ at the synchrotron. By monitoring the fluorescence response of the sample constituent materials at a constant photon energy (corresponding to the Ge K-edge absorption edge) as a function of x-ray beam position on the sample 2D maps have been produced.

Keywords

x-ray fluorescencenanostructurememory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1563: Symposium EE – Phase-Change Materials for Memory, Reconfigurable Electronics, and Cognitive Applications , 2013 , mrss13-1563-ee11-04
Copyright
Copyright © Materials Research Society 2013 

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References

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