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Modeling Growth Directional Features of Silicon Nanowires Obtained Using SiO

Published online by Cambridge University Press:  01 February 2011

T. Y. Tan ,
S. T. Lee  and
U. Gösele
T. Y. Tan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300;
S. T. Lee
Affiliation:
Center Of Super-Diamond and Advanced Films (COSDAF) & Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China;
U. Gösele
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, D06120 Halle, Germany.
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Abstract

Silicon nanowires (SiNW) grown using Si monoxide source materials are mainly oriented in the <112> direction, and some in the <110> direction. These directional features may be understood by postulating that growth of the SiNW is governed by lateral advancement of {111} plane layers that are stepped, and the role of particular kinds of dislocations providing perpetuate steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.38
Copyright
Copyright © Materials Research Society 2002

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