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MIM Capacitors Using ALD Al2O3 for RF IC and DRAM Applications

Published online by Cambridge University Press:  01 February 2011

Sung Yong Ko ,
Jung Ik Oh ,
Joung Cheul Choi ,
Kang Hee Lee ,
Young Ho Bae ,
Young Chul Jung  and
Yong Hyun Lee
Sung Yong Ko
Affiliation:
School of Electrical Engineering and Computer Science, Kyungpook National University, Deagu, Korea
Jung Ik Oh
Affiliation:
School of Electrical Engineering and Computer Science, Kyungpook National University, Deagu, Korea
Joung Cheul Choi
Affiliation:
School of Electrical Engineering and Computer Science, Kyungpook National University, Deagu, Korea
Kang Hee Lee
Affiliation:
School of Electrical Engineering and Computer Science, Kyungpook National University, Deagu, Korea
Young Ho Bae
Affiliation:
Division of Information and Communication Engineering, Uiduk University, Gyeongju, Korea
Young Chul Jung
Affiliation:
School of Computer and Electronic Engineering, Gyongju University, Gyeongju, Korea
Yong Hyun Lee
Affiliation:
School of Electrical Engineering and Computer Science, Kyungpook National University, Deagu, Korea
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Abstract

Metal-insulator-metal (MIM) capacitors were fabricated in a coplanar waveguide type using the Al2O3 thin film. The Al2O3 film was grown by atomic layer deposition(ALD) using Methyl-Pyrolidine-Tri-Methyl-Aluminum (MPTMA) and H2O on Ti. The capacitance per unit area of the fabricated MIM capacitor was 0.229 μF/cm2. And it had lower voltage coefficient of capacitance (VCC) and lower leakage current than that of Al2O3 MIM capacitor prepared by Al oxidation and Si3N4 MIM capacitor prepared by PECVD respectively. The fabricated Al2O3 MIM capacitors prepared by ALD exhibited low VCC, low leakage current, small frequency-dependent capacitance reduction, low temperature coefficient of capacitance (TCC) and good reliability. The characteristics of the device were suitable for RF ICs and DRAM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G3.10
Copyright
Copyright © Materials Research Society 2005

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References

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