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Microscopic and Theoretical Investigations of the Si-SiO2 Interface

Published online by Cambridge University Press:  10 February 2011

G. Duscher ,
R. Buzcko ,
S. J. Pennycook ,
S. T. Pantelides ,
H. Müllejans  and
M. Rühle
G. Duscher
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN, USA Vanderbilt University, Department of Physics & Astronomy, Nashville, TN, USA
R. Buzcko
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN, USA Vanderbilt University, Department of Physics & Astronomy, Nashville, TN, USA
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN, USA Vanderbilt University, Department of Physics & Astronomy, Nashville, TN, USA
S. T. Pantelides
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN, USA Vanderbilt University, Department of Physics & Astronomy, Nashville, TN, USA
H. Müllejans
Affiliation:
Max-Planck Institut für Metallforschung, Stuttgart, Germany
M. Rühle
Affiliation:
Max-Planck Institut für Metallforschung, Stuttgart, Germany
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Abstract

Z-contrast imaging and electron energy-loss spectroscopy with a spatial resolution at the atomic scale provide evidence of an atomically abrupt Si-SiO2, interface. Th micrographs revealed no indication for an interface layer of crystalline oxide at this thermally grown interface. Theoretical ab-initio calculations of two different interface structures showed that even in the most ideal interface the local density of states extends into the region of the oxide band gap. The O-K energy-loss near-edge structure was simulated for both interface models. The comparison of theoretical and experimental results of the O-K near-edge structure agreed and showed that states below the conduction band of the oxide are caused by the dimer-like SiO-Si bridges present in all structural models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 15
Copyright
Copyright © Materials Research Society 2000

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References

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