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Low Temperature Photoluminescence Properties Of In-Situ Zn Doped InP Layers Grown By Lp-Mocvd

Published online by Cambridge University Press:  15 February 2011

Y. B. Moon ,
S. K. Si ,
E. Yoon  and
S. J. Kim
Y. B. Moon
Affiliation:
School of Materials Science and Engineering & Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
S. K. Si
Affiliation:
School of Electrical Engineering & Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
E. Yoon
Affiliation:
School of Materials Science and Engineering & Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
S. J. Kim
Affiliation:
School of Electrical Engineering & Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
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Abstract

In situ Zn-doped InP layers are grown by low pressure metalorganic chemical vapor deposition at 620°C. Hole concentration increases with dopant flow rate, but reaches a saturated hole concentration of approximately 1.5 × 1018/cm3. Differently from the Zn-diffused InP case, photoluminescence (PL) of the in situ Zn doped InP shows band edge peak, e/D-A peak and distant D-A peak up to the hole concentration of 7.6 × 1017/cm3. These results can be explained by less generation of interstitial Zn atoms during in situ doping. PL characteristics of the in situ Zn-doped InP at the saturated hole concentration is extensively studied to explain its compensation mechanism. Two new deep bands, presumably responsible for the hole saturation behavior, are observed for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 535
Copyright
Copyright © Materials Research Society 1997

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References

[1] Hsu, J. K., Juang, C., Lee, B. J., and Chi, G. C., J. Vac. Sci. Technol. B 12, 1416 (1994).Google Scholar
[2] Montie, E. A., and Gurp, G. J. van, J. Appl. Phys. 66, 5549 (1989).Google Scholar
[3] Molassioti, A., Scholz, F., and Gao, Y., J. Cryst. Growth 102, 974 (1990).Google Scholar
[4] Blaauw, C., and Hobbs, L., Appl. Phys. Lett. 59, 674 (1991).Google Scholar
[5] Ky, N. H., Pavesi, L., Araujo, D., Ganiere, J. D., and Reinhart, F. K., J. Appl. Phys. 69, 7585 (1991).Google Scholar
[6] Ky, N. H., Ganiere, J. D., Gailhnou, M., Blanchard, B., Pavesi, L., Burri, G., Araujo, D., and Reinhart, F. K., J. Appl. Phys. 73, 3769 (1993).Google Scholar
[7] Nelson, A. W., and Westbrook, L. D., J. Cryst. Growth 68, 102 (1984).Google Scholar
[8] Swaminathan, V., Donnelly, V. M. and Long, J., J. Appl. Phys. 58, 4565 (1985).Google Scholar
[9] Stromme, B. J., Stillman, G. E., Oberstar, J. D., Chan, S. S., J. Electron. Mater. 13, 463 (1984).Google Scholar
[10] Donnelly, V. M., and McCaulley, J. A., J. Vac. Sci. Technol. A 8, 84 (1990).Google Scholar
[11] Moon, Y. B., Si, S. K., Yoon, E., and Kim, S. J., submitted to J.Appl. Phys..Google Scholar
[12] Dingle, R., Phys. Rev. 184, 788 (1969).Google Scholar
[13] Alfred, G. F., and Borcherds, P. H., J. Phys. C 8, 2022 (1975).Google Scholar
[14] Barin, I., in Thermochemical Data of Pure Substances Part II, (VCH, Weinheim, 1989), p. 1695.Google Scholar