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Investigation of Multilayer Systems for Optical Bragg Reflectors by X-ray Double Crystal Topography and - DIF-Fractometry

Published online by Cambridge University Press:  26 February 2011

B. Jenichen ,
R. Köhler ,
R. Hey  and
M. Höricke
B. Jenichen
Affiliation:
Zentralinstitut für Elektronenphysik, O-1086 Berlin, Federal Republic of Germany
R. Köhler
Affiliation:
Zentralinstitut für Elektronenphysik, O-1086 Berlin, Federal Republic of Germany
R. Hey
Affiliation:
Zentralinstitut für Elektronenphysik, O-1086 Berlin, Federal Republic of Germany
M. Höricke
Affiliation:
Zentralinstitut für Elektronenphysik, O-1086 Berlin, Federal Republic of Germany
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Abstract

Optical Bragg reflectors consisting of the binaries AlAs and GaAs were investigated using double crystal topography and diffractometry. In undoped mirror stacks stress relaxation due to the formation of misfit dislocations was observed, which could be prevented by doping the stacks with 1018cm−3 silicon. In topographs taken in the substrate and different satellite reflections an unusual vanishing of the contrast of different segments of the misfit dislocations takes place, that shows these different segments to be located at different levels of the stack. The contrasts of the threading dislocations are quite similar in the substrate and the satellite reflections whereas the misfit dislocations change their contrast markedly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 159
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Segmüller, A., Krishna, P. and Esaki, L., J. Appl. Cryst. 10 (1977)1–6CrossRefGoogle Scholar
[2] Kervarec, J., Baudet, M., Caulet, J., Auvray, P., Emery, J. Y. and Regreny, A., J. Appl. Cryst. (1984) 17, 196–205 CrossRefGoogle Scholar
[3] Speriosu, V. S. and Vreeland, T., J. Appl. Phys. 56 (1984)1591–1600 CrossRefGoogle Scholar
[4] Tapfer, L. and Ploog, K. Phys. Rev. B31 (1986) 5565–5574 CrossRefGoogle Scholar
[5] Baumbach, T., Brühl, H. G., Pietsch, U., and Terauchi, H. phys.stat.sol. (a) 105 (1988)197–205 CrossRefGoogle Scholar
[6] Petroff, J. F., Sauvage, M., Riglet, P. and Hashizume, H. Phil. Mag. A41 (1980)319–338 CrossRefGoogle Scholar
[7] Riglet, P., Sauvage, M., Petroff, J. F. and Epelboin, Y. Phil. Mag. A42., (1980)339–358 CrossRefGoogle Scholar
[8] Köhler, R. in Röntgenographische Dünnschicht- und Oberflächencharakterisierung, Hrsg. H.R.Höche, Martin Luther Universität Halle 1989 Google Scholar
[9] Stolz, W., Tapfer, L., Breitschwerdt, A., and Ploog, K. Appl. Phys. A38 (1985)97–102 CrossRefGoogle Scholar
[10] Petroff, J. F., Suavage, M., Bensoussan, S., Capelle, B., Auvray, P., and Baudet, M., J. Appl. Cryst. 20 (1987)111–116 CrossRefGoogle Scholar
[11] Jenichen, B., Köhler, R. and Möhling, W., physica status solidi (a) 89 (1985)79–87 CrossRefGoogle Scholar
[12] Jenichen, B., Köhler, R. and Möhling, W., J. Phys. E 21 (1988)1062–1066 CrossRefGoogle Scholar
[13] Bartels, W. J., Hornstra, J. and Lobeek, D. J. W. Acta Cryst. A42 (1986)539–545 CrossRefGoogle Scholar
[14] Baumbach, T. and Pietsch, U. personal communicationGoogle Scholar
[15] Matthews, J. W., Blakeslee, A. E. J. Cryst. Growth 27 (1974)118 Google Scholar
[16] Jenichen, B., Köhler, R. und Geisler, R. im Tagungsband des Arbeitskreises Röntgentopographie, Clausthal-Zellerfeld 1990 Google Scholar
[17] Fornari, R., Paorici, C., Zanotti, L. and Zuccalli, G., J. Cryst. Growth El (1983)415–418 CrossRefGoogle Scholar