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Investigating Atomic Scale Phenomena at Materials Interfaces With Correlated Techniques in STEM/TEM

Published online by Cambridge University Press:  10 February 2011

N. D. Browning ,
A. W. Nicholls ,
E. M. James ,
I. Arslan ,
Y. Xin ,
K. Kishida  and
S. Stemmer
N. D. Browning
Affiliation:
Department of Physics, University of Illinois, 845 W. Taylor St., Chicago, IL 60607-7059
A. W. Nicholls
Affiliation:
RRC, University of Illinois, 845 W. Taylor St., Chicago, IL 60607-7058
E. M. James
Affiliation:
Department of Physics, University of Illinois, 845 W. Taylor St., Chicago, IL 60607-7059
I. Arslan
Affiliation:
Department of Physics, University of Illinois, 845 W. Taylor St., Chicago, IL 60607-7059
Y. Xin
Affiliation:
National High Magnetic Field Laboratory, Florida State University, 1800 E. Paul Dirac Drive, Tallahassee, FL 32310
K. Kishida
Affiliation:
NRIM, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JAPAN
S. Stemmer
Affiliation:
Department of Mech. Eng. & Materials Science, Rice University, 6100 Main St., Houston, TX 77005-1892
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Abstract

A complete understanding of the complexities behind the structure-property relationships at materials interfaces requires the structure, composition and bonding to be characterized on the fundamental atomic scale. This level of characterization is beyond the scope of a single imaging or microanalysis technique and so to solve practical interface problems, correlation between multiple techniques must be achieved. Here we describe recent advances in the JEOL 2010F 200kV field-emission STEM/TEM that now allow atomic resolution imaging and analysis to be obtained in both TEM and STEM mode and discuss two applications of these techniques

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 589 , 1999 , 311
Copyright
Copyright © Materials Research Society 2001

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