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Interface Structure and Zn Diffusion in the CdTe/ZnTe/Si System Grown by MBE

Published online by Cambridge University Press:  10 February 2011

S.-C. Y. Tsen ,
David J. Smith ,
P. A. Crozier ,
S. Rujirawat ,
G. Brill  and
S. Sivananthan
S.-C. Y. Tsen
Affiliation:
Arizona State Univ, Center for Solid State Science, Tempe, AZ
David J. Smith
Affiliation:
Arizona State Univ, Center for Solid State Science, Tempe, AZ
P. A. Crozier
Affiliation:
Arizona State Univ, Center for Solid State Science, Tempe, AZ
S. Rujirawat
Affiliation:
Univ. of Illinois at Chicago, Microphysics Laboratory, Department of Physics, Chicago, IL
G. Brill
Affiliation:
Univ. of Illinois at Chicago, Microphysics Laboratory, Department of Physics, Chicago, IL
S. Sivananthan
Affiliation:
Univ. of Illinois at Chicago, Microphysics Laboratory, Department of Physics, Chicago, IL
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Abstract

Two CdTe/ZnTe/Si samples were grown on Si (211) and Si(111) substrates by molecular beam epitaxy for use as lattice-matched substrates for HgCdTe growth. An As precursor was used before growing ZnTe. In order to understand the interface structure, the Zn diffusion problem and any effect due to As passivation, high resolution bright-field images, dark-field images and energy-dispersive X-ray spectra were studied. Fourier-filtered images have revealed details of the atomic arrangements and the dislocation defects at the interface. Local lattice parameters such as (111) d-spacings at different distances from the interface were measured to determine the Zn concentration based on Vegard's law. The Zn concentration profiles were consistent with measurements from energy-dispersive X-ray spectroscopy. The As-passivated interface showed vacancy-type defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 589 , 1999 , 197
Copyright
Copyright © Materials Research Society 2001

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