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Interface Recombination and Threshold Current in Grinsch-QW ALGaAs/GaAs Laser Diodes

Published online by Cambridge University Press:  26 February 2011

K. Xie ,
H. M. Kim ,
C. R. Wie ,
J. A. Varriano  and
G. W. Wicks
K. Xie
Affiliation:
Department of Electrical and Computer Engineering, State university of New York at Buffalo, Buffalo NY 14260
H. M. Kim
Affiliation:
Department of Electrical and Computer Engineering, State university of New York at Buffalo, Buffalo NY 14260
C. R. Wie
Affiliation:
Department of Electrical and Computer Engineering, State university of New York at Buffalo, Buffalo NY 14260
J. A. Varriano
Affiliation:
Institute of Optics, University of Rochester, Rochester, NY 14627
G. W. Wicks
Affiliation:
Institute of Optics, University of Rochester, Rochester, NY 14627
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Abstract

A series of Graded-Index Waveguide Separate-Confinement Heterostructure Quantum Well (GRINSCH-QW) laser diodes were grown by MBE at the systematically varied substrate temperatures. The threshold current of laser diodes were found to depend strongly on the growth temperature. The structure and electrical characteristics of the laser diodes were studied by double-crystal x-ray diffraction, I-V-T, C-V and deep level transient spectroscopy (DLTS). The interface recombination is found to be the dominant carrier transport process in the high threshold current laser diodes and is closely related to the presence of the high concentration of deep traps and interface states. In the low threshold current laser diodes, diffusion process is found to be the dominant carrier transport process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 591
Copyright
Copyright © Materials Research Society 1992

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References

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