Hostname: page-component-6bf8c574d5-t27h7 Total loading time: 0 Render date: 2025-02-15T09:19:02.816Z Has data issue: false hasContentIssue false
  • English
  • Français

Interaction of Atonic Hydrogen with Ion Bombardment Induced Defects at Si/SiO2 Interfaces

Published online by Cambridge University Press:  22 February 2011

S. Kar  and
S. Ashok
S. Kar
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology, Kanpur-208016, India
S. Ashok
Affiliation:
Center for Electronic Materials & Processing, The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

Electrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 281
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pankove, J. I., in Semiconductors and Semimetals. edited by Pankove, J.I. and Johnson, N.M. (Academic Press, New York, 1991), p. 35.Google Scholar
2. Pankove, J. I. and Johnson, N.M., in Semiconductors and Semimetals. edited by Pankove, J.I. and Johnson, N.M. (Academic Press, New York, 1991), p. 1.Google Scholar
3. Kar, S. and Ashok, S., J. Appl. Phys. (to be published).Google Scholar
4. Kar, S., Raychaudhuri, A., Sinha, A. K., and Ashok, S., Appl. Surf. Sci. 48/49, 264 (1991).Google Scholar
5. Kar, S., Pandey, A., Raychaudhuri, A., and Ashok, S., J. Electrochem. Soc. 139, 2026 (1992).Google Scholar
6. Raychaudhuri, A., Chatterjee, S., Ashok, S., and Kar, S., IEEE Trans. Electron. Devices 38, 316 (1991).Google Scholar
7. Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping Range of Ions in Solids (Pergamon Press, New York, 1985).Google Scholar
8. Herring, C. and Johnson, N.M., in Semiconductors and Semimetals. edited by Pankove, J.I. and Johnson, N.M. (Academic Press, New York, 1991), Ch. 10.Google Scholar
9. Pankove, J. I., in Semiconductors and Semimetals. edited by Pankove, J.I. and Johnson, N.M. (Academic Press, New York, 1991), Ch. 6.Google Scholar
10. Srikanth, K. and Ashok, S., J. Appl. Phys. 70, 4779 (1991).Google Scholar