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Influence Of The Temperature And The Light Intensity On The Metastable Transformation Of EL2

Published online by Cambridge University Press:  15 February 2011

A. Alvarez ,
J. Jimenez ,
M. A. Gonzalez  and
M. Chafai
A. Alvarez
Affiliation:
Fisica de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain, jimenez@hp9000.uva.es
J. Jimenez
Affiliation:
Fisica de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain, jimenez@hp9000.uva.es
M. A. Gonzalez
Affiliation:
Fisica de la Materia Condensada, ETS Ingenieros Industriales, 47011 Valladolid, Spain, jimenez@hp9000.uva.es
M. Chafai
Affiliation:
L.E.T.I., Faculté des Sciences, 50000 Meknes, Morocco.
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Abstract

The temperature dependence of the metastable transformation of EL2 is explained in terms of the thermal emission of holes from the actuator level, VA. A model including the thermal release of holes from this level is presented. The numerical solution allows to account for the low photoquenching efficiency above 80 K in an accurate way. The existence of this level was postulated on the bases of the electric compensation and the temperature dependence of the metastable transformation of EL2 in semiinsulating GaAs. This level allows a complete description of the driving mechanism of the metastable transformation of EL2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 429
Copyright
Copyright © Materials Research Society 1997

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