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Heteroepitaxy of Si and Ge on CaF2/Si (111)

Published online by Cambridge University Press:  26 February 2011

R. W. Fathauer ,
L. J. Schowalter ,
N. Lewis  and
E. L. Hall
R. W. Fathauer
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NY 12301
L. J. Schowalter
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NY 12301
N. Lewis
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NY 12301
E. L. Hall
Affiliation:
General Electric Corporate Research and Development Center, P.O. Box 8, Schenectady, NY 12301
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Abstract

Si and Ge layers have been grown on CaF /Si (111) by molecular beam epitaxy (MBE). The use of thin room-tempe rature predeposits [1] with Ge epitaxy has been found to improve the growth. Studies of the initial stages of Ge epitaxy indicate that island growth occurs, and evidence also indicates island formation occurs in the Si case as well. A qualitative model is presented which explains many of the features observed in these systems and suggests reasons for the superior growth of Ge compared to Si. Finally, use of a Ge Si, /Si superlattice is shown to improve Si epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 313
Copyright
Copyright © Materials Research Society 1986

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References

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