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Growth of Reduced Graphene Oxide

Published online by Cambridge University Press:  09 September 2014

Jingfeng Huang ,
Hu Chen ,
Derrick Fam ,
Steve H. Faulkner ,
Wenbin Niu ,
Melanie Larisika ,
Christoph Nowak ,
Myra A. Nimmo  and
Alfred Iing Yoong Tok
Jingfeng Huang
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore. Tel.: +65 67904935. Institute for Sports Research, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore. School of Sport, Exercise and Health Sciences, Loughborough University, Leicestershire, LE113TU, UK.
Hu Chen
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore. Tel.: +65 67904935. Institute for Sports Research, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore. School of Sport, Exercise and Health Sciences, Loughborough University, Leicestershire, LE113TU, UK.
Derrick Fam
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore. Tel.: +65 67904935.
Steve H. Faulkner
Affiliation:
School of Sport, Exercise and Health Sciences, Loughborough University, Leicestershire, LE113TU, UK.
Wenbin Niu
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore. Tel.: +65 67904935.
Melanie Larisika
Affiliation:
Austrian Institute of Technology (AIT) GmbH, Donau-City Str.1, Vienna, 1220, Austria. Centre for Biomimetic Sensor Science, 50 Nanyang Drive, Singapore, 637553, Singapore.
Christoph Nowak
Affiliation:
Austrian Institute of Technology (AIT) GmbH, Donau-City Str.1, Vienna, 1220, Austria. Centre for Biomimetic Sensor Science, 50 Nanyang Drive, Singapore, 637553, Singapore.
Myra A. Nimmo
Affiliation:
Institute for Sports Research, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore. School of Sport, Exercise and Health Sciences, Loughborough University, Leicestershire, LE113TU, UK.
Alfred Iing Yoong Tok*
Affiliation:
School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore. Tel.: +65 67904935. Institute for Sports Research, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
*
*E-mail address: miytok@ntu.edu.sg.
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Abstract

Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scalable production route. However, one of the main limitations that prevent the use of RGO in electronics is the high electrical resistance deviation between fabricated chips. In this article, we present the novel growth of RGO which can bridge the gaps in-between existing flakes and thus reduce the electrical resistance standard deviation from 80.5 % to 16.5 %. The average resistivity of the treated RGO of ∼ 3.8 nm thickness was 200 Ω/square. The study uses an atmospheric-pressure chemical vapour deposition (CVD) system with hydrogen and argon gas bubbling through ethanol before entering the furnace. With a treatment of 2 hours, 100 % of the silicon dioxide substrate was covered with RGO from an initial 65 % coverage. This technology could enable large-scale application of RGO use in practical electronic devices.

Keywords

Cchemical vapor deposition (CVD) (deposition)electrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1702: Symposium OO – De Novo Graphene , 2014 , mrss14-1702-oo20-05
Copyright
Copyright © Materials Research Society 2014 

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