Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-15T09:08:18.149Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Stability of Strained-Layer Multiple Quantum Wells

Published online by Cambridge University Press:  26 February 2011

Shigeru Niki ,
Yunosuke Maktta ,
Akimasa Yamada  and
Junichi Shimada
Shigeru Niki
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI 1–1–4 Umezono, Tsukuba, Ibaraki, 305, Japan
Yunosuke Maktta
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI 1–1–4 Umezono, Tsukuba, Ibaraki, 305, Japan
Akimasa Yamada
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI 1–1–4 Umezono, Tsukuba, Ibaraki, 305, Japan
Junichi Shimada
Affiliation:
Optoelectronics Division, Electrotechnical Laboratory, MITI 1–1–4 Umezono, Tsukuba, Ibaraki, 305, Japan
Get access

Abstract

Thirty-period In0.28Ga0.72As(100Å)/GaAs (100Å) multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (lOO)-oriented GaAs substrate with a 0.5μm-thick InyGa1-yAs (0≤y≤0.28) buffer layer interposed between the QW layer and the GaAs substrate. The MQWs with y close to the average InAs mole fraction of the QW layer exhibited good crystalline quality. It indicates that the strain is well-balanced between the GaAs and In0.28Ga0.72As layer. A significant change in their photoluminescence spectra has been observed when annealed above 750δC by means of rapid thermal annealing, implying a structural disorder in the QW“region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 201
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Niki, S., Wieder, H. H., and Chang, W. S. C., SPIE Vol. 1215, DigilaL Oplical Compnting II, 235 (1990).Google Scholar
2 Hu, K., Chen, L., Madhukar, A., Chen, P., Rajkumar, K. C., Kaviani, K., Karim, Z., Kyriakaris, C., and Tanguay, A. R. Jr, Appl. Phys. Lett. 59, 1108 (1991).CrossRefGoogle Scholar
3 Pezeshki, B., Lord, S. M., and Harris, J. S. Jr, Appl. Phys. Lett. 59, 888 (1991).CrossRefGoogle Scholar
4 Woodward, T. K., Sizer, T. II, Sivco, D. L., and Cho, A. Y., Appl. Phys. Lett. 57, 548 (1990).CrossRefGoogle Scholar
5 Niki, S., Cheng, A., Chang, J. C. P., Chang, W. S. C., and Wieder, H. H., Jpn. J. Appl. Phys. 29, L1833 (1990).CrossRefGoogle Scholar
6 Hull, R., Bean, J. C., Cerdeira, F., Fiory, A. T., and Gibson, J. M., Appl. Phys. Lett. 48, 56 (1986).CrossRefGoogle Scholar
7 Allen Vawter, G. and Myers, D. R., J. Appl. Phys. 65, 476 (1989).Google Scholar
8 Wie, C. R., J. Appl. Phys. 65, 2267 (1989).CrossRefGoogle Scholar