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Electronic Excitation Effects on Defect Production and Radiation Annealing in Fe Irradiated at ∼80K with Energetic Particles

Published online by Cambridge University Press:  10 February 2011

Y. Chimi ,
A. Iwase  and
N. Ishikawa
Y. Chimi
Affiliation:
Advanced Science Research Center, Japan Atomic Energy Research Institute, Tokai-mura, Naka-gun, Ibaraki-ken 319-11, Japan, chimi@popsvr.tokai.jaeri.go.jp
A. Iwase
Affiliation:
Advanced Science Research Center, Japan Atomic Energy Research Institute, Tokai-mura, Naka-gun, Ibaraki-ken 319-11, Japan, chimi@popsvr.tokai.jaeri.go.jp
N. Ishikawa
Affiliation:
Advanced Science Research Center, Japan Atomic Energy Research Institute, Tokai-mura, Naka-gun, Ibaraki-ken 319-11, Japan, chimi@popsvr.tokai.jaeri.go.jp
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Abstract

Defect accumulation behavior in Fe irradiated with high energy (∼100MeV) ions, low energy (∼1MeV) ions and 2MeV electrons was studied by measuring the electrical resistivity change of the specimen at ∼80K as a function of particle fluence. From the experimental results, the defect production cross-section, the defect annihilation cross-section and the damage efficiency (the ratio of the experimental defect production cross-section to the calculated one) were derived for each irradiation. By comparing the results for high energy ion-irradiations with those for low energy ion- and electron-irradiations, the dependence of defect production and radiation annealing on the electronic excitation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 504: Symposium KK – Atomistic Mechanisms in Beam Synthesis & Irradiation… , 1997 , 221
Copyright
Copyright © Materials Research Society 1998

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References

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