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Electrochemical Tailoring and Optical Investigation of Advanced Refractive Index Profiles in Porous Silicon Layers

Published online by Cambridge University Press:  15 February 2011

S. Zangooie ,
R. Jansson  and
H. Arwin
S. Zangooie
Affiliation:
Laboratory of Applied Optics, Department of Physics and Measurement Technology Linköping University, SE-581 83 Linköping, Sweden
R. Jansson
Affiliation:
Laboratory of Applied Optics, Department of Physics and Measurement Technology Linköping University, SE-581 83 Linköping, Sweden
H. Arwin*
Affiliation:
Laboratory of Applied Optics, Department of Physics and Measurement Technology Linköping University, SE-581 83 Linköping, Sweden
*
Corresponding author: han@ifm.liu.se
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Abstract

Porosity depth profiles with exponential or sinusoidal shape were fabricated electrochemically in crystalline silicon using time-variable current densities and studied employing variable angle spectroscopic ellipsometry. Since volume porosity in porous silicon depends on the current density, it was possible to electrochemically tailor porosity depth profiles, which in a first approximation resembled the time modulation of the applied current. Optical characterization of the samples were realized using multilayer optical models and the Bruggeman effective medium approximation allowing variations of the index of refraction according to the applied current density profiles. The analysis also revealed deviations from desired profiles in terms of in-depth inhomogeneities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 195
Copyright
Copyright © Materials Research Society 1999

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