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Effect of Strained Si-Si Bonds in Amorphous Silicon Incubation Layer on Microcrystalline Silicon Nucleation

Published online by Cambridge University Press:  17 March 2011

Hiroyuki Fujiwara ,
Michio Kondo  and
Akihisa Matsuda
Hiroyuki Fujiwara
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
Michio Kondo
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
Akihisa Matsuda
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
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Abstract

In order to investigate microcrystalline silicon (μc-Si:H) nucleation from the hydrogenated amorphous silicon (a-Si:H) phase, we performed a H2-plasma treatment of a-Si:H layers deposited at different temperatures. In the H-treatment experiment, the formation process of an infrared peak at ∼1937 cm-1, assigned to SiHn (n=1∼2) complex, is studied, as the SiHn complex is proposed to be a precursor for the μc-Si:H nucleation. With increasing the a-Si:H deposition temperature, the total amount of the SiHn complex formed by the H treatment increased. Nucleation of μc-Si:H under high H2-dilution conditions showed a clear relationship with the SiHn complex formed by the H treatment. The SiHn complex formation process, in terms of strained Si-Si bond breaking by H, is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A1.2
Copyright
Copyright © Materials Research Society 2001

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References

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