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Dynamics of Periodic Step-Bunching During Growth on Vicinal GaAs(110) Surfaces: Computer Simulations and Experiments

Published online by Cambridge University Press:  15 February 2011

Mohan Krishnamurthy ,
D. R. M. Williams  and
P. M. Petroff
Mohan Krishnamurthy
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
D. R. M. Williams
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
P. M. Petroff
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
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Abstract

Molecular beam epitaxial growth on GaAs(110) vicinal surfaces results in the formation of periodic micro-facets. We compare experimental results with computer simulations of a simple one dimensional step-flow growth model. The simulations show that preferential adatom attachment to the down step in a step array results in the destruction of step uniformity. A kinetic limitation due to adatom diffusion length along the terraces leads to stabilization of a periodic array of step-bunches. We extend our simulations to show the effects of the attachment and diffusion parameters on the dynamics of facet evolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 327
Copyright
Copyright © Materials Research Society 1993

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References

[1] Burton, W. K., Cabrera, N. and Frank, F. C., Philos. Trans. R. Soc. London, Ser. A 243, 299 (1951).Google Scholar
[2] see for example, Ghez, R. and Iyer, S. S., IBM J. Res. Develop. 32, 804, (1988).Google Scholar
[3] Schwoebel, R. L., J. Appl. Phys. 40, 614 (1969).CrossRefGoogle Scholar
[4] Chernov, A. A., Modern Crystallography III (Springer-Verlag, Berlin, 1984).Google Scholar
[5] Tokura, Y., Saito, H. and Fukui, T., J. Cryst. Growth, 94, 46 (1989).Google Scholar
[6] Gossmann, H. J., Sinden, F. W. and Feldman, L. C., J. Appl. Phys. 67, 745 (1990).Google Scholar
[7] Chalmers, S. A., Tsao, J. Y. and Gossard, A. C., Appl. Phys. Lett. 61, 645 (1992).Google Scholar
[8] Williams, D. R. M. and Krishnamurthy, Mohan, Appl. Phys. Lett. 62, 1350 (1993).Google Scholar
[9] Colas, E., Nihous, G. C. and Hwang, D. M., J. Vac. Sci. Technol. A 10, 691 (1992).Google Scholar
[10] Wheeler, A.A., Ratsch, C., Morales, A., Cox, H. M. and Zangwill, A., Phys. Rev. B 46, 2428 (1992).CrossRefGoogle Scholar
[11] Krishnamurthy, M., Wassermeier, M., Williams, D. R. M. and Petroff, P. M., Appl. Phys. Lett. to be published.Google Scholar
[12] Nötzel, R., Däweritz, L., Ledentsov, N. N. and Ploog, K., Appl. Phys. Lett. 60, 1615 (1992).CrossRefGoogle Scholar
[13] Sato, M., Maehashi, K., Asahi, H., Hasegawa, S., Nakashima, H., Superlattices and Microstructures, 7, 279 (1990).CrossRefGoogle Scholar
[14] Krishnamurthy, M., Wassermeier, M., Weman, H., Merz, J. L. and Petroff, P. M., Mat. Res. Symp. Proc. 237, 473 (1992).Google Scholar
[15] Williams, D. R. M., Krishnamurthy, M. and Petroff, P. M., unpublished.Google Scholar