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Dependence of the Growth of Al2O3 Films on the Growth Conditions in the ALE-Like Process

Published online by Cambridge University Press:  22 February 2011

Jia-Fa Fan  and
Koichi Toyoda
Jia-Fa Fan
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama, 351–01, Japan.
Koichi Toyoda
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama, 351–01, Japan.
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Abstract

Effects of the growth conditions on the growth and the quality of thin films of Al2O3 were investigated in the ALE-like process. It has been found that the growth rate remains nearly independent of the growth conditions when the pulse heights are 80–120 mTorr and 20–160 mTorr for H2O2 and TMA respectively, the pulse duration longer than 0.3 s, the base pressure below 1 mTorr, and the growth temperature higher than 150°C. Also, we found that the density, the chemical bonding strength, and the electrical properties improved markedly with raising the growth temperature although the growth rate remained nearly constant. In addition, area-selective growth and partly polycrystalline films were favorably obtained by using pulsed molecular beams of TMA and H2O2 in the growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 517
Copyright
Copyright © Materials Research Society 1993

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References

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