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DC Characteristics of Nanometer-Gatelength GaAS Mesfets

Published online by Cambridge University Press:  26 February 2011

K. Nummila ,
M. Tong ,
A. A. Ketterson  and
I. Adesida
K. Nummila
Affiliation:
Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, 208 N. Wright St., Urbana-Champaign, IL 61801.
M. Tong
Affiliation:
Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, 208 N. Wright St., Urbana-Champaign, IL 61801.
A. A. Ketterson
Affiliation:
Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, 208 N. Wright St., Urbana-Champaign, IL 61801.
I. Adesida
Affiliation:
Coordinated Science Laboratory, Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, 208 N. Wright St., Urbana-Champaign, IL 61801.
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Abstract

High-resolution electron-beam lithography has been used to fabricate GaAs MESFETs with gate-lengths ranging from 1 μm down to 30 nm. Devices were fabricated on two MESFET epitaxial layers; one with undoped GaAs-buffer layer while the other had a p- -GaAs-buffer layer. The DC characteristics including transconductance, output conductance, threshold voltage, and subthreshold current of these devices have been measured. Devices on both epitaxial layers exhibited significant short-channel effects. A negative threshold voltage shift and an increase in the subthreshold current were observed. These effects become prominent as the device aspect ratio (gate length/channel thickness) falls below 5. It is shown however that the effects were considerably suppressed in the layer with p- -GaAs buffer due to better confinement of electrons in the channel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 563
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Mishra, U. K., Beaubien, R. S., Delaney, M. J., Brown, A. S., and Hackett, L. H., IEDM 1986, 829.Google Scholar
2. Adams, J. A., Thayne, I. G., Taylor, M. R. S., Wilkinson, C. D. W., Beaumont, S. P., Johnson, N. P., Kean, A. H. and Stanley, C. R., Electron. Lett. 26 (14), 1019 (1990).Google Scholar
3. Han, C. J., Ruden, P. P., Grider, D., Fraasch, A., Newstrom, K., Joslyn, P. and Shur, M., IEDM 1988, 696.Google Scholar
4. Nummila, K., Ketterson, A. A., Caracci, S., Kolodzey, J. and Adesida, I., Electron. Lett. 26 (17), 1519 (1991).Google Scholar
5. Daembkes, H., Brockerhoff, W., Heime, K. and Cappy, A., IEEE Trans. Electron Devices 31 (8), 1032 (1984).Google Scholar
6. Enoki, T., Sugitani, S., Yamasaki, K. and Ohwada, K., IEEE Electron Device Letters 11 (1), 63 (1990).Google Scholar
7. Tong, M., Ballegeer, D.G., Ketterson, A., Roan, E.J., Cheng, K.Y. and Adesida, I., to be published in J. Electron. Mater. (1992).Google Scholar