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Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

Published online by Cambridge University Press:  17 March 2011

N. V. Nguyen ,
J. E. Maslar ,
Jin-Yong Kim ,
Jin-Ping Han ,
Jin-Won Park ,
D. Chandler-Horowitz  and
E. M. Vogel
N. V. Nguyen
Affiliation:
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
J. E. Maslar
Affiliation:
Process Measurements Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Jin-Yong Kim
Affiliation:
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Jin-Ping Han
Affiliation:
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Jin-Won Park
Affiliation:
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
D. Chandler-Horowitz
Affiliation:
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
E. M. Vogel
Affiliation:
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
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Abstract

The crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect slight structural defects in the SOI layer. If a pure crystalline silicon dielectric function is assumed for the SOI layer, the spectroscopic ellipsometry data fitting yields an unacceptably large discrepancy between the experimental and modeled data. The best fits for all the samples result in a dielectric function of the SOI layer that consists of a physical mixture of crystalline silicon and about 4 % to 7 % of amorphous silicon. Using such a mixture indicates that there are still some defects in the SOI layer when compared with the high-quality bulk crystalline silicon. This observation is further supported by Raman spectroscopy measurements. The Raman spectra of all SOI samples exhibit a feature at about 495 cm−1 that is not observed in the crystalline silicon spectrum. Features similar to the 495 cm−1 feature have been reported in the literature and attributed to dislocations or faults in the silicon lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B8.19
Copyright
Copyright © Materials Research Society 2004

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