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Arsenic Diffusion and Precipitation at AsSG/Si Interface

Published online by Cambridge University Press:  28 February 2011

Yoshitaka Tsunashima ,
Takako Kashio ,
Hideichi Kawaguchi ,
Shinji Onga  and
Kikuo Yamabe
Yoshitaka Tsunashima
Affiliation:
TOSHIBA Co., ULSI Research Center, l. Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan
Takako Kashio
Affiliation:
TOSHIBA Co., ULSI Research Center, l. Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan
Hideichi Kawaguchi
Affiliation:
TOSHIBA Co., ULSI Research Center, l. Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan
Shinji Onga
Affiliation:
TOSHIBA Co., ULSI Research Center, l. Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan
Kikuo Yamabe
Affiliation:
TOSHIBA Co., ULSI Research Center, l. Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan
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Abstract

In As diffusion process from AsSG films, As precipitation occurs at the AsSG/Si interface and functions as a diffusion barrier for As. This precipitation phenomenon is explained by the model based on the supersaturation of AsSG films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 569
Copyright
Copyright © Materials Research Society 1989

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References

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