Hostname: page-component-6bf8c574d5-xtvcr Total loading time: 0 Render date: 2025-02-14T23:52:04.241Z Has data issue: false hasContentIssue false
  • English
  • Français

Anomalous Diffusion of Hydrogen and the Dependence of the Diffusion Constants on Hydrogen Content in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

R. Shinar ,
H. Jia ,
X.-L. Wu  and
J. Shinar
R. Shinar
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, Iowa 50011
H. Jia
Affiliation:
Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
X.-L. Wu
Affiliation:
Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
J. Shinar
Affiliation:
Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
Get access

Abstract

The diffusion constant of hydrogen DH(t) in hydrogenated amorphous silicon (a-Si:H) is strongly dependent on the Si-bonded H content CH of the films. It increases by over four orders of magnitude for CH ranging from 1 to 19 at. %. In an rf sputter-deposited film of CH ∼5 at. % it increases with time at 300 ≤ T ≤ 362°C. The dispersion parameter α in DH(t) = D∞ (ωt)-αis thus negative. This observation and the increase of α with T above a sample-dependent temperature Tτ are discussed in relation to low temperature structural relaxation processes in the amorphous network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 419
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kakalios, J., Street, R.A., and Jackson, W.B., Phys. Rev. Lett. 59, 1037 (1987).Google Scholar
2. Jackson, W.B., Phys. Rev. B 38, 3595 (1988).Google Scholar
3. Shinar, J., Shinar, R., Mitra, S., and Kim, J.-Y., Phys. Rev. Lett. 62, 2001 (1989).Google Scholar
4. Shinar, J., Shinar, R., Wu, X.-L., Mitra, S., and Girvan, R.F., Phys. Rev. B 43, 1631 (1991)CrossRefGoogle Scholar
5. Tang, X.-M., Weber, J., Baer, Y., and Finger, F., Phys. Rev. B 41, 7945 (1990);Google Scholar
Tang, X.-M., Weber, J., Baer, Y., and Finger, F., Phys. Rev. B, 42, 7277 (1990).Google Scholar
6. Pantelides, S.T., Phys. Rev. Lett. 57, 2979 (1986).Google Scholar
7. Mitra, S., Shinar, R., and Shinar, J., Phys. Rev. B 42, 6746 (1990).CrossRefGoogle Scholar
8. Halpern, V., Phys. Rev. Lett. 67, 611 (1991).Google Scholar
9. Carlson, D.E. and Magee, C.W., Appl. Phys. Lett. 33, 81 (1978).Google Scholar
10. Cardona, M., Phys. Status Solidi (b) 118, 463 (1983).CrossRefGoogle Scholar
11. Albers, M.L., Shinar, J., and Shanks, H.R., J. Appl. Phys. 64, 1859 (1988).Google Scholar
12. Jia, H., Shinar, J., and Wu, H.-S., Bull Am. Phys. Soc. 37, 182 (1992) and unpublished ununresults.Google Scholar
13. Jia, H., Shinar, J., Chen, Y., and Williamson, D.L., Bull Am. Phys. Soc. 37, 128 (1992) and unpublished results.Google Scholar
14. Shinar, R., Shinar, J., Jia, H., and Wu, X.L., unpublished results.Google Scholar
15. Street, R.A., Phys. Rev. B 43, 2454 (1991);Google Scholar
Street, R.A., Kakalios, J., Tsai, C.C., and Hayes, T.M., Phys. Rev. B 35, 1316 (1987);Google Scholar
Street, R.A., Hack, M., and Jackson, W.B., Phys. Rev. B 37, 4209 (1988).Google Scholar
16. Beyer, W., in Tetrahedraliy Bonded Amorphous Semiconductors, edited by Adler, D. and Fritzsche, H., Plenum Press, NY, 1985, p. 129.Google Scholar
17. Roorda, S., Doorn, S., Sinke, W.C., Scholte, P.M.L.O., and van Loenen, E., Phys. Rev. Lett. 62, 1880 (1989).Google Scholar