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An Assessment of Au Wire Bump Thermo-Mechanical Integrity in GaAs/Al2O3 Flip Chip Modules
Published online by Cambridge University Press: 15 February 2011
Abstract
The flexibility and cost advantages of the wire bumping process are making it increasingly attractive as an alternative bumping method for low I/O flip chip technologies. In this study, electrical measurements from DC to 8.1 GHz and die shear experiments are used to assess the thermo-mechanical integrity of Au/2%Pd wire bumped GaAs/Al2O3 flip chip modules. Finite Element Modeling results for in-process and in-service temperature cycling indicated that the maximum stress of the flip chip module is well below the failure stresses for GaAs, Al2O3 and the Au interconnect. These results are validated by data from thermal cycling experiments. Average shear strength after thermal cycle, thermal shock, and thermal aging (MIL-STD-883C, Condition C) was 64 grams/bump. Electrical characterization (from 45 MHz to 8.1 GHz) using a coplanar waveguide flip chip test structure showed no thermal stress-induced microwave energy losses.
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- Copyright © Materials Research Society 1994
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