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AlAs-GaAs Beterojunction Engineering by Means of Group IV Interface Layers

Published online by Cambridge University Press:  26 February 2011

G. Bratina ,
L. Sorba ,
G. Biasiol ,
L. Vanzetti  and
A. Franciosi
G. Bratina
Affiliation:
Laboratorio TASC dell' INFM, Area di Ricerca di Trieste, Trieste, Italy and Department of Chemical Engineering and Materiale Science, University of Minnesota, Minneapolis, MN 55455, USA
L. Sorba
Affiliation:
Laboratorio TASC dell' INFM, Area di Ricerca di Trieste, Trieste, Italy and Department of Chemical Engineering and Materiale Science, University of Minnesota, Minneapolis, MN 55455, USA
G. Biasiol
Affiliation:
Laboratorio TASC dell' INFM, Area di Ricerca di Trieste, Trieste, Italy and Department of Chemical Engineering and Materiale Science, University of Minnesota, Minneapolis, MN 55455, USA
L. Vanzetti
Affiliation:
Laboratorio TASC dell' INFM, Area di Ricerca di Trieste, Trieste, Italy and Department of Chemical Engineering and Materiale Science, University of Minnesota, Minneapolis, MN 55455, USA
A. Franciosi*
Affiliation:
Laboratorio TASC dell' INFM, Area di Ricerca di Trieste, Trieste, Italy and Department of Chemical Engineering and Materiale Science, University of Minnesota, Minneapolis, MN 55455, USA
*
c.Author to whom correspondence should be addressed, at the University of Minnesota.
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Abstract

Valence and conduction band discontinuities in AlAs-GaAs heterostruc-tures have been tuned through fabrication of epitaxial Ge layers at the interface. The local interface dipole associated with the Ge layer can be added to, or subtracted from the natural band offsets depending on the growth sequence. Comparison with earlier results for AlAs-Si-GaAs heterostructures, shows that the observed dipole is consistent in direction and order of magnitude for Ge and Si interface layers. The dipole initially increases with interface layer thickness more rapidly for Ge than for Si, however the total maximum dipole achievable at the interface is identical (0.4eV), within experimental uncertainty, for the two group IV elements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 603
Copyright
Copyright © Materials Research Society 1992

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Footnotes

a.

Fellow of the Area di Ricerca di Trieste, Trieste, Italy.

b.

On leave from Istituto di Acustica O. M. Corbino del C. N. R., via Cassia 1216, 1–00189 Roma, Italy.

References

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