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1.5 νm Luminescence from ErQ based Organic Light Emitting Diodes

Published online by Cambridge University Press:  10 February 2011

R.J. Curry  and
W.P. Gillin
R.J. Curry
Affiliation:
Department of Physics, Queen Mary and Westfield College, University of London, London, E1 4NS, United Kingdom
W.P. Gillin
Affiliation:
Department of Physics, Queen Mary and Westfield College, University of London, London, E1 4NS, United Kingdom
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Abstract

Organic light emitting diodes have been fabricated using erbium tris(8-hydroxy-quinoline) as the emitting layer and N, N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as the hole transporting layer. Room temperature electroluminescence was observed at 1.5 νdue to intra-atomic transitions between the 4I13/2; and 4I15/2; levels in the Er3+, ion. These results make the possibility of producing silicon compatible 1.5 νm technology based on such devices a reality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 561: Symposium F – Organic Nonlinear Optical Materials and Devices , 1999 , 211
Copyright
Copyright © Materials Research Society 1999

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References

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