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Published online by Cambridge University Press: 10 February 2011
Organic light emitting diodes have been fabricated using erbium tris(8-hydroxy-quinoline) as the emitting layer and N, N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as the hole transporting layer. Room temperature electroluminescence was observed at 1.5 νdue to intra-atomic transitions between the 4I13/2; and 4I15/2; levels in the Er3+, ion. These results make the possibility of producing silicon compatible 1.5 νm technology based on such devices a reality.