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Gate contact materials in Si channel devices

Published online by Cambridge University Press:  18 February 2011

Huang-Chun Wen  and
J.J. Chambers
Huang-Chun Wen
Affiliation:
Texas Instruments; h-wen@ti.com
J.J. Chambers
Affiliation:
Texas Instruments; james_j_chambers@hotmail.com
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Abstract

Research on contact materials in silicon semiconductor devices has recently gained significant momentum due to the increasing performance demands as the complementary metal oxide semiconductor technology advances. Applications include transistor materials such as gate electrodes and contacts to highly doped semiconductors substrates. This review will discuss the key issues in the development of metal gate electrodes with high-κ dielectrics to replace the conventional polycrystalline silicon electrode. Challenges in establishing a work function measurement technique, the role of the metal/high-κ interface in modulating the effective work function, and a review of leading industry solutions will be discussed.

Type
Research Article
Information
MRS Bulletin , Volume 36 , Issue 2: Contact materials for nanoelectronics , February 2011 , pp. 101 - 105
Copyright
Copyright © Materials Research Society 2011

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