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Engineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalation

Published online by Cambridge University Press:  23 November 2012

U. Starke ,
S. Forti ,
K.V. Emtsev  and
C. Coletti
U. Starke
Affiliation:
Max-Planck-Institut für Festkörperforschung, Germany; u.starke@fkf.mpg.de
S. Forti
Affiliation:
Max-Planck-Institut für Festkörperforschung, Germany; s.forti@fkf.mpg.de
K.V. Emtsev
Affiliation:
Max-Planck-Institut für Festkörperforschung, Germany; k.emtsev@fkf.mpg.de
C. Coletti
Affiliation:
Center for Nanotechnology Innovation, Italian Institute of Technology, Italy; camilla.coletti@iit.it
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Abstract

Homogeneous graphene layers can be grown epitaxially on SiC(0001), promising scalable graphene technology. However, covalent bonds at the SiC–graphene interface induce strong n-doping of the graphene. This doping can be compensated by functionalizing the graphene surface with electronegative molecules. Alternatively, the influence of the substrate can be largely suppressed by breaking the covalent bonds through atomic intercalation. Hydrogen atoms migrate under the graphene, passivate the underlying SiC layer, and decouple the graphene from the substrate. In this way, large-scale, homogeneous, quasi-free-standing graphene layers can be achieved. By intercalation of germanium, the electronic structure of the decoupled graphene can be tailored. Two symmetrically doped, namely, n- and p-type, phases are stabilized, depending on the amount of intercalated germanium. This is achieved by annealing a germanium film at various temperatures after it is initially deposited on the covalently bonded carbon layer. In an intermediate temperature regime, lateral p–n junctions between the two phases can be formed, size-tailored on a mesoscopic scale.

Keywords

C (27)
Type
Research Article
Information
MRS Bulletin , Volume 37 , Issue 12: Graphene Fundamentals and Functionalities , December 2012 , pp. 1177 - 1186
Copyright
Copyright © Materials Research Society 2012

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References

Emtsev, K.V., Speck, F.Seyller, Th., Ley, L., Riley, J.D., Phys. Rev. B 77, 155303 (2008).CrossRefGoogle Scholar
Riedl, C., Zakharov, A.A., Starke, U., Appl. Phys. Lett. 93, 033106 (2008).CrossRefGoogle Scholar
Berger, C., Song, Z., Li, X., Wu, X., Brown, N., Naud, C., Mayou, D., Li, T., Hass, J., Marchenkov, A.N., Conrad, E.H., First, P.N., de Heer, W.A., Science 312, 1191 (2006).CrossRefGoogle Scholar
First, P.N., de Heer, W.A., Seyller, T., Berger, C., Stroscio, J.A., Moon, J.-S., Mater. Res. Soc. Bull. 35, 296 (2010).CrossRefGoogle Scholar
Hiebel, F., Mallet, P., Varchon, F., Magaud, L., Veuillen, J.-Y., Phys. Rev. B 78, 153412 (2008).CrossRefGoogle Scholar
Starke, U., Riedl, C., J. Phys.: Condens. Matter 21, 134016 (2009).Google Scholar
Coletti, C., Riedl, C., Lee, D.S., Patthey, L., Klitzing, K.V., Smet, J.H., Starke, U., Phys. Rev. B 81, 235401 (2010).CrossRefGoogle Scholar
Riedl, C., Coletti, C., Iwasaki, T., Zakharov, A.A., Starke, U., Phys. Rev. Lett. 103, 246804 (2009).CrossRefGoogle Scholar
Forti, S., Emtsev, K.V., Coletti, C., Zakharov, A.A., Riedl, C., Starke, U., Phys. Rev. B 84, 125449 (2011).CrossRefGoogle Scholar
Emtsev, K., Zakharov, A.A., Coletti, C., Forti, S., Starke, U., Phys. Rev. B 84, 125423 (2011).CrossRefGoogle Scholar
Al-Temimy, A., Riedl, C., Starke, U., Appl. Phys. Lett. 95, 231907 (2009).CrossRefGoogle Scholar
Moreau, E., Ferrer, F.J., Vignaud, D., Godey, S., Wallart, X., Phys. Status Solidi A 207, 300 (2010).CrossRefGoogle Scholar
Maeda, F., Hibino, H.J. Phys. D: Appl. Phys. 44, 435305 (2011).CrossRefGoogle Scholar
Strupinski, W., Grodecki, K., Wysmolek, A., Stepniewski, R., Szkopek, T., Gaskell, P.E., Grüneis, A., Haberer, D., Bozek, R., Krupka, J., Baranowski, J.M., Nano Lett. 11, 1786 (2011).CrossRefGoogle Scholar
Soubatch, S., Saddow, S.E., Rao, S.P., Lee, W.Y., Konuma, M., Starke, U., Mater. Sci. Forum 483–485, 761 (2005).CrossRefGoogle Scholar
Frewin, C.L., Coletti, C., Riedl, C., Starke, U., Saddow, S.E., Mater. Sci. Forum 615–617, 589 (2009).CrossRefGoogle Scholar
Ramachandran, V., Brady, M.F., Smith, A.R., Feenstra, R.M., Greve, D.W., J. Electron. Mater. 27, 308 (1998).CrossRefGoogle Scholar
Chaussende, D., Latu-Romain, L., Auvray, L., Ucar, M., Pons, M., Madar, R., Mater. Sci. Forum 483–485, 225 (2005).CrossRefGoogle Scholar
Ohta, T., Bostwick, A., McChesney, J.L., Seyller, T., Horn, K., Rotenberg, E., Phys. Rev. Lett. 98, 206802 (2007).CrossRefGoogle Scholar
Riedl, C., Starke, U., Bernhardt, J., Franke, M., Heinz, K., Phys. Rev. B 76, 245406 (2007).CrossRefGoogle Scholar
Charrier, A., Coati, A., Argunova, T., Thibaudau, F., Garreau, Y., Pinchaux, R., Forbeaux, I., Debever, J.M., Sauvage-Simkin, M., Themlin, J.M., J. Appl. Phys. 92, 2479 (2002).CrossRefGoogle Scholar
Hass, J., Feng, R., Li, T., Li, X., Zong, Z., Heer, W.A.d., First, P.N., Conrad, E.H., Jeffrey, C.A., Berger, C., Appl. Phys. Lett. 89, 143106 (2006).CrossRefGoogle Scholar
Gong, G., Shu, N., Feenstra, R.M., Devaty, R.P., Choyke, W.J., Winston, K.C., Michael, G.K., Appl. Phys. Lett. 90, 253507 (2007).CrossRefGoogle Scholar
Hibino, H., Kageshima, H., Maeda, F., Nagase, M., Kobayashi, Y., Kobayashi, Y., Yamaguchi, H., e-J. Surf. Sci. Nanotechnol. 6, 107 (2008).CrossRefGoogle Scholar
Ohta, T., El Gabaly, F., Bostwick, A., McChesney, J.L., Emtsev, K.V., Schmid, A.K., Seyller, T., Horn, K., Rotenberg, E., New J. Phys. 10, 023034 (2008).CrossRefGoogle Scholar
Emtsev, K.V., Bostwick, A., Horn, K., Jobst, J., Kellogg, G.L., Ley, L., McChesney, J.L., Ohta, T., Reshanov, S.A., Rotenberg, E., Schmid, A.K., Waldmann, D., Weber, H.B., Seyller, Th., Nat. Mater. 8, 203 (2009).CrossRefGoogle Scholar
Virojanadara, C., Yakimova, R., Osiecki, J.R., Syvajarvi, M., Uhrberg, R.I.G., Johansson, L.I., Zakharov, A.A., Surf. Sci. 603, L87 (2009).CrossRefGoogle Scholar
de Heer, W.A., Berger, C., Ruan, M., Sprinkle, M., Li, X.B., Hu, Y.K., Zhang, B.Q., Hankinson, J., Conrad, E., Proc. Natl. Acad. Sci. 108, 16900 (2011).CrossRefGoogle Scholar
Riedl, C., Coletti, C., Starke, U., J. Phys. D: Appl. Phys. 43, 374009 (2010).CrossRefGoogle Scholar
Speck, F., Ostler, M., Roehrl, J., Jobst, J., Waldmann, D., Hundhausen, M., Ley, L., Weber, H.B., Seyller, T., Mater. Sci. Forum 645–648, 629 (2010).CrossRefGoogle Scholar
Bostwick, A., Speck, F., Seyller, T., Horn, K., Polini, M., Asgari, R., MacDonald, A.H., Rotenberg, E., Science 328, 999 (2010).CrossRefGoogle Scholar
Walter, A., Bostwick, A., Jeon, K.-J., Speck, F., Ostler, M., Seyller, Th., Moreschini, L., Chang, Y.J., Polini, M., Asgari, R., MacDonald, A.H., Horn, K., Rotenberg, E., Phys. Rev. B 84, 085410 (2011).CrossRefGoogle Scholar
Tanabe, S., Sekine, Y., Kageshima, H., Hibino, H., Jpn. J. Appl. Phys. 51, 02BN02 (2012).CrossRefGoogle Scholar
Lee, K., Kim, S., Points, M.S., Beechem, T.E., Ohta, T., Tutuc, E., Nano Lett. 11, 3624 (2011).CrossRefGoogle Scholar
Robinson, J.A., Hollander, M., LaBella, M., Trumbull, K.A., Cavalero, R., Snyder, D.W., Nano Lett. 11, 3875 (2011).CrossRefGoogle Scholar
Virojanadara, C., Zakharov, A.A., Yakimova, R., Johansson, L.I., Surf. Sci. 604, L4 (2010).CrossRefGoogle Scholar
Watcharinyanon, S., Virojanadara, C., Osiecki, J.R., Zakharov, A.A., Yakimova, R., Uhrberg, R.I.G., Johansson, L.I., Surf. Sci. 605, 1662 (2011).CrossRefGoogle Scholar
Starke, U., in Silicon Carbide, Recent Major Advances, Choyke, W.J., Matsunami, H., Pensl, G., Eds. (Springer, New York, 2004), pp. 281–316.CrossRefGoogle Scholar
Goler, S., Coletti, C., Piazza, V., Pingue, P., Colangelo, F., Pellegrini, V., Emtsev, K.V., Forti, S., Starke, U., Beltram, F., Heun, S., Carbon 51, 249 (2013).CrossRefGoogle Scholar
Hannon, J.B., Copel, M., Tromp, R.M., Phys. Rev. Lett. 107, 166101 (2011).CrossRefGoogle Scholar
Bostwick, A., Ohta, T., Seyller, Th., Horn, K., Rotenberg, E., Nat. Phys. 3, 36 (2007).CrossRefGoogle Scholar
Zhou, S.Y., Gweon, G.-H., Fedorov, A.V., First, P.N., de Heer, W.A., Lee, D.-H., Guinea, F., Castro Neto, A.H., Lanzara, A., Nat. Mater. 6, 770 (2007).CrossRefGoogle Scholar
Ohta, T., Bostwick, A., Seyller, Th., Horn, K., Rotenberg, E., Science 313, 951 (2006).CrossRefGoogle Scholar
Ristein, J., Science 313, 1057 (2006).CrossRefGoogle Scholar
Chen, W., Qi, D.C., Gao, X.Y., Wee, A.T.S., Prog. Surf. Sci. 84, 279 (2009).CrossRefGoogle Scholar
Gierz, I., Riedl, C., Starke, U., Ast, C.R., Kern, K., Nano Lett. 8, 4603 (2008).CrossRefGoogle Scholar
Riedl, C., Coletti, C., Iwasaki, T., Zakharov, A.A., Starke, U., Mater. Sci. Forum 645–648, 623 (2010).CrossRefGoogle Scholar
Coletti, C., Emtsev, K.V., Zakharov, A.A., Ouisse, T., Chaussende, D., Starke, U., Appl. Phys. Lett. 99, 081904 (2011).CrossRefGoogle Scholar
Ristein, J., Mammadov, S., Seyller, Th., Phys. Rev. Lett. 108, 246104 (2012)CrossRefGoogle Scholar
Coletti, C., Forti, S., Principi, A., Emtsev, K.V., Zakharov, A., Daniels, K., Daas, B., Chandrashekhar, M.V.S., Ouisse, T., Chaussende, D., Polini, M., Starke, U., in preparation.Google Scholar
Hibino, H., Kageshima, H., Maeda, F., Nagase, M., Kobayashi, Y., Yamaguchi, H., Phys. Rev. B 77, 075413 (2008).CrossRefGoogle Scholar
Deretzis, I., La Magna, A., Appl. Phys. Express 4, 125101 (2011).CrossRefGoogle Scholar
Gierz, I., Suzuki, T., Weitz, R.T., Lee, D.S., Krauss, B., Riedl, C., Starke, U., Höchst, H., Smet, J.H., Ast, C.R., Kern, K., Phys. Rev. B 81, 235408 (2010).CrossRefGoogle Scholar
Chuang, F.C., Lin, W.H., Huang, Z.-Q., Hsu, C.H., Kua, C.C., Ozolins, V., Yeh, V., Nanotechnology 22, 275704 (2011).CrossRefGoogle Scholar
Hsu, C.H., Lin, W.H., Ozolins, V., Chuang, F.C., Appl. Phys. Lett. 100, 063115 (2012).CrossRefGoogle Scholar
Virojanadara, C., Watcharinyanon, S., Zakharov, A.A., Johansson, L.I., Phys. Rev. B 82, 205402 (2010).CrossRefGoogle Scholar
Watcharinyanon, S., Johansson, L.I., Zakharov, A.A., Virojanadara, C., Surf. Sci. 606, 401 (2012).CrossRefGoogle Scholar
Watcharinyanon, S., Johansson, L.I., Xia, C., Virojanadara, C., J. Appl. Phys. 111, 083711 (2012).CrossRefGoogle Scholar
Deretzis, I., La Magna, A., Phys. Rev. B 84, 235426 (2011).CrossRefGoogle Scholar
Sandin, A., Jayasekera, T., Rowe, J.E., Kim, K.W., Buongiorno Nardelli, M., Dougherty, D.B., Phys. Rev. B 85, 125410 (2012).CrossRefGoogle Scholar
Xia, C., Watcharinyanon, S., Zakharov, A.A., Yakimova, R., Hultman, L., Johansson, L.I., Virojanadara, C., Phys. Rev. B 85, 045418 (2012).CrossRefGoogle Scholar
Katsnelson, M.I., Novoselov, K.S., Geim, A.K., Nat. Phys. 2, 620 (2006).CrossRefGoogle Scholar
Cheianov, V.V., Fal’ko, V., Altshuler, B.L., Science 315, 1252 (2007).CrossRefGoogle Scholar