Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-10T13:56:48.313Z Has data issue: false hasContentIssue false
  • English
  • Français

Advances in Chemical-Mechanical Planarization

Published online by Cambridge University Press:  31 January 2011

Rajiv K. Singh  and
Rajeev Bajaj
Get access

Abstract

The primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical–mechanical planarization (CMP), also known as chemical–mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field. Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer–pad–slurry interactions, process integration issues, the formulation of abrasive-free slurries for copper polishing, understanding surface topography issues in shallow trench isolation, and emerging applications.

Keywords

chemical–mechanical planarizationchemical–mechanical polishingCMPcopper interconnectsLow-κ dielectricsnanotopographyshallow trench isolationsilica polishingslurry design.
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 10: Advances in Chemical-Mechanical Planarization , October 2002 , pp. 743 - 751
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Braun, A.E., Semicond. Int. 24 (November 2001) p. 51.Google Scholar
2.Corbett, M.A., Solid State Technol. 43 (December 2000) p. 72.Google Scholar
3.Shannon, V. and Smith, D.C., Semicond. Int. 24 (May 2001) p. 93.Google Scholar
4.Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era: Process Technology, 2nd ed., Vol. 1 (Lattice Press, Sunset Beach, CA, 1999).Google Scholar
5.Steigerwald, J.M., Murarka, S.P., and Gutmann, R.J., Chemical–Mechanical Planarization of Microelectronic Materials (John Wiley & Sons, New York, 1997).CrossRefGoogle Scholar
6.Sze, S.M., VLSI Technology, 2nd ed. (McGraw-Hill, New York, 1988).Google Scholar
7.Preston, F., J. Soc. Glass Technol. 11 2 (1927) p. 14.Google Scholar
8.Brown, N.J., Baker, P.C., and Maney, R.T., in Proc. SPIE Contemporary Methods of Optical Fabrication, Vol. 306 (SPIE—The International Society for Optical Engineering Bellingham, WA, 1981) p. 42.CrossRefGoogle Scholar
9.Cook, L.M., J. Non-Cryst. Solids 120 (1990) p. 152.CrossRefGoogle Scholar
10.Kaufman, F.B., Thompson, D.B., Broadie, R.E., Jaso, M.A., Guthrie, W.L., Pearson, D.J., and Small, M.B., J. Electrochem. Soc. 138 (11) (1991) p. 3460.CrossRefGoogle Scholar
11.Lee, S.-M., Choi, W., Craciun, V., Jung, S.-H., and Singh, R.K., “Electrochemical Measurements to Understand the Dynamics of the Chemically Modified Surface Layer Formation During Copper CMP,” presented at Symposium I, Materials Research Society Meeting, San Francisco, April 2002, Paper No. I4.11.Google Scholar
12.Mahajan, U., Bielmann, M., and Singh, R.K., Electrochem. Solid-State Lett. 2 (1999) p. 80.CrossRefGoogle Scholar
13.Bielmann, M., Mahajan, U., Singh, R.K., Agarwal, P., Mischler, S., Rosset, E., and Landolt, D., Chemical–Mechanical Polishing: Fundamentals and Challenges, edited by Babu, S.V., Danyluk, S., Krishnan, M., and Tsujimura, M. (Mater. Res. Soc. Symp. Proc. 566, Warrendale, PA, 2000) p. 97.Google Scholar
14. For CMP tools, see Applied Materials Inc. Home Page, http://www.amat.com; the EBARA Technologies Inc. Home Page, http://www.ebaratech.com; and the Lam Research Home Page, http://www.lamrc.com (accessed July 2002).Google Scholar
15.Singh, R.K., Bajaj, R., Moinpour, M., and Meuris, M., eds., Chemical–Mechanical Polishing 2000: Fundamentals and Materials Issues (Mater. Res. Soc. Symp. Proc. 613, Warrendale, PA, 2001).Google Scholar
16.Vacassy, R., Flatt, R.J., Hofmann, H., Choi, K.S., and Singh, R.K., J. Colloid Interface Sci. 227 (2000) p. 302.CrossRefGoogle Scholar
17.Kondo, S., Sakuma, N., Homma, Y., Goto, Y., Ohashi, N., Yamaguchi, H., and Owada, N., J. Electrochem. Soc. 147 (2000) p. 3907.CrossRefGoogle Scholar
18.Keleher, J., Burkhard, C., Batchelor, A., Guo, L., Little, C.B., and Li, Y., 7th International Chemical–Mechanical Planarization for ULSI Multilevel Interconnection Conference (CMP-MIC Proc. 02 IMIC-700P, 2002) p. 188.Google Scholar
19.Singh, R.K. and Lee, S.-M. (unpublished).Google Scholar
20.Lee, T.H., Sci. Am. 52 (January 2002) p. 286.Google Scholar