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Photodetectors based on sensitized two-dimensional transition metal dichalcogenides—A review

Published online by Cambridge University Press:  30 October 2017

Congpu Mu Open the ORCID record for Congpu Mu [Opens in a new window] ,
Jianyong Xiang  and
Zhongyuan Liu
Congpu Mu
Affiliation:
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, People’s Republic of China; and Hebei Key Laboratory of Microstructure Material Physics, Yanshan University, Qinhuangdao 066004, People’s Republic of China
Jianyong Xiang*
Affiliation:
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, People’s Republic of China
Zhongyuan Liu*
Affiliation:
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, People’s Republic of China
*
a) Address all correspondence to these authors. e-mail: jyxiang@ysu.edu.cn
b) e-mail: liuzy0319@ysu.edu.cn
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Abstract

Atomically thin transition metal dichalcogenides (TMDCs), such as WS2 and MoS2, have opened up new opportunities for the next generation of optoelectronics owing to their unique properties such as optical transparency, high carrier mobility, widely tunable band gap, and strong light–matter interaction. The photodetection performance relies primarily on the light absorption efficiency and separation efficiency of photoexcited electron–holes. The photodetectors with all broadband response, high photoconductive gain, high response speed, and high detectivity is arduous challenge to realize using one photo-active material. Building of photodetectors composed of two or more light absorber materials of different band gaps was an efficient route to realize high performance light detection. The application of a thin sensitizing layer atop the TMDCs has proven to be a viable route to improve the photodetection performance due to the efficient charge separation at the interface, and fast charge transfer process due to the high carrier mobility. In this article, we review the progress made toward hybrid photodetector based on TMDCs with various sensitizers from metal to large band-gap semiconductor in architectures from zero-dimensional quantum dot to two-dimensional crystal.

Keywords

photodetectortransition metal dichalcogenidesheterostructure
Type
Invited Review
Information
Journal of Materials Research , Volume 32 , Issue 22 , 28 November 2017 , pp. 4115 - 4131
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Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Winston V. Schoenfeld

References

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