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Separation of Internal Strains and Lattice Distortion Caused by Oxygen Impurities in Aluminum Nitride Hot-Pressed Ceramics
Published online by Cambridge University Press: 06 March 2019
Extract
Recently aluminum nitride (A1N) has been intensively studied as a promising material for production of hybrid integrated circuit substrates because of its high thermal conductivity, high fjexural strength, and nontoxic nature. The estimated theoretical value of its thermal conductivity at room temperature is 320 W/mK, but it is strongly degraded by the introduction of oxygen. The measured values vary from 30 to 260 W/mK, Therefore, in production of this material the reduction of oxygen contamination is of paramount importance.
- Type
- V. Residual Stress, Crystallite Size and rms Strain Determination by Diffraction Methods
- Information
- Advances in X-Ray Analysis , Volume 38: Forty-third Annual Conference on Applications of X-ray Analysis , 1994 , pp. 479 - 487
- Copyright
- Copyright © International Centre for Diffraction Data 1994
References
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