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Residual Stress in Si3N4-Passivated GaAs Wafers

Published online by Cambridge University Press:  06 March 2019

Allan Ward III  and
R. W. Hendricks
Allan Ward III
Affiliation:
Materials Science and Engineering Department Virginia Polytechnic Institute and State University Blacksburg, Virginia USA 24061-0237
R. W. Hendricks
Affiliation:
Materials Science and Engineering Department Virginia Polytechnic Institute and State University Blacksburg, Virginia USA 24061-0237
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Abstract

The nature of residual stress was determined in single crystal gallium arsenide (GaAs) bare wafers, silicon nitride-passivated GaAs wafers, and fully processed die. A methodology to determine strain in single crystals using X-ray diffraction was developed and applied to the specific case of gallium arsenide. The data show an increase in residual stress associated with the application of the Si3N4 passivation layer to approximately 60% of the fracture stress of the material. Further device processing only slightly increased residual stress values.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 39: Forty-Fourth Annual Conference on Applications of X-ray Analysis, July 31 - August 4, 1995 , 1995 , pp. 237 - 241
Copyright
Copyright © International Centre for Diffraction Data 1995

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