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An Update on Standards Activity for Txrf and the Challenges Ahead

Published online by Cambridge University Press:  06 March 2019

R. S. Hockett
R. S. Hockett*
Affiliation:
Charles Evans & Associates 301 Chesapeake Drive Redwood City, CA 94063
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Abstract

Standards organizations active in surface analysis using TXRF and VPD/TXRF include: (a) American Society for Testing and Materials (ASTM), (b) Semiconductor Equipment and Materials International (SEMI), (c) Ultra Clean Society of Japan (UCS), and (d) International Standards Organization Technical Committee 201 (ISO TC/201). The standards activities are presently dynamic, and they are on an international scale, This paper provides an update on the status of these activities, and presents the challenges ahead yet to be resolved.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 39: Forty-Fourth Annual Conference on Applications of X-ray Analysis, July 31 - August 4, 1995 , 1995 , pp. 767 - 770
Copyright
Copyright © International Centre for Diffraction Data 1995

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References

1. Hockett, R. S., “TXRF Semiconductor Applications”, Advances in X-Ray Analysis Vol. 37. edited by Gilfrich, J. V. et al, Plenum Press (New York, NY) pp. 565–575 (1994).Google Scholar
2. Hockett, R. S., “TXRF Reference Standards: A Discussion”, Contamination Control and Defect Reduction in Semiconductor Manufacturing III, edited by Dennis Schmidt, N., ECS Proceedings Vol. 94-9, The Electrochemical Society, pp. 323–338 (1994).Google Scholar
3. Hockett, R. S., Metz, J. M., and Tan, S., “Quantification Issues for VPD/TXRF”, Proceedings of the Second International Symposium on Ultraclean Processing of Silicon Surfaces, edited by March Heyns, published by Uitgeverij Acco, Leuven, Belgium, pp. 171–176 (1994).Google Scholar
4. Hockett, R. S., “A Review of Standardization Issues for TXRF and VPD/TXRF”, Advances in X-Ray Chemical Analysis, Japan, Vol. 26s, pp. 79- 84 (1995).Google Scholar
5. ASTM F 1526, “Standard Test Method for Measuring Surface Metal Contamination on Silicon Wafers by Total Reflection X-Ray Fluorescence Spectroscopy”, 1995 Annual Book of ASTM Standards, Vol. 10. 05, American Society for Testing and Materials, Philadelphia, PA, 1995.Google Scholar
6. SEMI E45, “Specification for the Determination of Inorganic Contamination from Minienvironments”, SEMI International Standards 1995. Semiconductor Equipment and Materials International, Mountain View, CA. 1995.Google Scholar
7. SEMI Ml, “Specifications for Polished Monocrystalline Silicon Wafers, ” ibid., 1995.Google Scholar
8. SEMI M18, “Format for Silicon Wafer Specification Form for Order Entry, ” ibid., 1995.Google Scholar
9. Hockett, R. S., Ikeda, S., and Taniguchi, T., “TXRF Round Robin Results, ” Cleaning Technology in Semiconductqr, Device Manufacturing, edited by Ruzyllo, J. and Novak, R. E., ECS Proceedings Vol. 92-12, The Electrochemical Society, Pennington, NJ., pp. 324–337 (1992).Google Scholar
10. Hockett, R. S., Ikeda, S., and Taniguchi, T., “Round Robin Results for TXRF”, Extended Abstracts Vol. 92-2. Abstract No, 340, p. 498, The Electrochemical Society, Pennington, NJ., p. 498 (1992).Google Scholar
11. Kawai, K., “Standardization of TXRF and Its Measurement Results, ” Proceedings of the 22nd Symposium on ULSI Ultra Glean Technology, August 29-31, 1994, Tokyo, published by The Ultra Clean Society, p. 406 (1994).Google Scholar
12. Private Communication, Dr. Peter Eichinger, GeMeTec, Munich, Germany, 1995.Google Scholar
13. Schwenke, H. and Knoth, J., “Depth Profiling in Surfaces using TXRF, ” Advances in X-Ray Chemical Analysis. Japan. Vol. 26s, pp. 137–144 (1995).Google Scholar